050-5843 rev a 3-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. to-247 power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage popular to-247 package g d s power mos v ? caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 5a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 1200 1.500 250 1000 100 24 apt1201r5bvfr_svfr 1200 1040 3040 370 2.96 -55 to 150 300 1030 1300 apt1201r5bvfr apt1201r5svfr 1200v 10a 1.500 ?? ?? ? downloaded from: http:///
dynamic characteristics apt1201r5bvfr_svfr 050-5843 rev a 3-2004 z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.40.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 sstarting t j = +25c, l = 26mh, r g = 25 ? , peak i l = 10a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s i d 10a, di / dt = 100a/s, t j 150c, r g = 2.0 ? v r = 1200v. apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d 10a) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d 10a, di / dt = 100a/s) reverse recovery charge(i s = -i d 10a, di / dt = 100a/s) peak recovery current(i s = -i d 10a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 600v i d = 10a @ 25c v gs = 15v v dd = 600v i d = 10a @ 25c r g = 1.6 ? unit pf nc ns min typ max 1040 1.3 18 t j = 25c 250 t j = 125c 430 t j = 25c 1.0 t j = 125c 2.5 t j = 25c 11 t j = 125c 17 thermal characteristics symbol r jc r ja min typ max 0.34 40 unitc/w characteristicjunction to case junction to ambient min typ max 3700 4440 320 450 150 225 190 285 16 24 90 135 12 24 10 20 50 75 14 28 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 050-5843 rev a 3-2004 apt1201r5bvfr_svfr typical performance curves 0 100 200 300 400 500 600 0 5 10 15 20 25 30 02468 051 01 52 02 5 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 2016 12 84 0 1.41.3 1.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 2016 12 84 0 2016 12 84 0 10 86 4 2 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 4.5v v gs =10v v gs =20v t j = +25c t j = -55c t j = +25c t j = -55c 5v 4v v gs =5.5v, 6v, 7v, 10v &15v t j = +125c t j = +125c normalized to v gs = 10v @ 0.5 i d [cont.] 4.5v 5v 4v v gs =5.5v, 6v, 7v, 10v &15v downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 050-5843 rev a 3-2004 apt1201r5bvfr_svfr 1 5 10 50 100 500 1200 .01 .1 1 10 50 0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t c =+25c t j =+150c single pulse 5010 51 0.50.1 2016 12 84 0 i d = i d [cont.] 15,00010,000 5,0001,000 500100 5010 51 .5.1 operation here limited by r ds (on) t j =+150c t j =+25c c rss c oss c iss v ds =600v 10s 100s1ms 10ms 100ms dc v ds =240v v ds =120v apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline downloaded from: http:///
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